IRF510SPBF, МОП-транзистор, N Канал, 5.6 А, 100 В, 540 мОм

Характеристики

IRF510SPBF, МОП-транзистор, N Канал, 5.6 А, 100 В, 540 мОм The IRF510SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

• Dynamic dV/dt rating
• Repetitive avalanche rated
• -55 to 175 C Operating temperature range
• Ease of paralleling
• Surface-mount

Полупроводники — ДискретныеТранзисторыМОП-транзисторы