FDN340P, МОП-транзистор, P Канал, 2 А, -20 В, 0.06 Ом

Характеристики

FDN340P, МОП-транзистор, P Канал, 2 А, -20 В, 0.06 Ом The FDN340P from Fairchild is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using Fairchild’s PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at portable electronics, load switching, power management, battery charging circuits and DC to DC conversion.

• High performance trench technology for extremely low Rds(on)
• Low gate charge typically 7.2 nC
• Drain to source voltage (Vds) of -20V
• Gate to source voltage of ±8V
• Continuous drain current of -2A
• Power dissipation Pd of 500mW
• Operating junction temperature range from -55 C to 150 C
• On resistance Rds(on) of 82mohm at Vgs -2.5V

Полупроводники — ДискретныеТранзисторыМОП-транзисторы