BSC080N03LS G, МОП-транзистор, N Канал, 53 А, 30 В

Характеристики

BSC080N03LS G, МОП-транзистор, N Канал, 53 А, 30 В The BSC080N03LS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.

• Easy to design in
• Increased battery lifetime
• Improved EMI behaviour making external snubber networks obsolete
• Saving space
• Reducing power losses
• Optimized for high performance Buck converter
• Fast switching MOSFET for SMPS
• Qualified according to JEDEC for target applications
• Logic level
• Excellent gate charge x RDS (ON) product (FOM)
• Very low ON-resistance RDS (ON)
• Superior thermal resistance
• Avalanche rated
• Halogen-free, Green device

Полупроводники — ДискретныеТранзисторыМОП-транзисторы