Транзистор BGB741L7ESDE6327XTSA1, RF BIP TRANSISTORS

Характеристики

BGB741L7ESDE6327XTSA1, RF BIP TRANSISTORSThe BGB 741L7ESD E6327 is a robust low-noise Broadband RF Amplifier MMIC based on Infineon’s reliable high volume silicon germanium carbon bipolar technology. Its integrated feedback provides a broadband pre-match to 50R at input and output up to 3.5GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range.

• High performance amplifier
• High RF input power robustness of 20dBm
• Power-OFF function
• Halogen-free

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