IKZ50N65ES5XKSA1, БТИЗ транзистор, 80 А, 1.35 В, 274 Вт

Характеристики

IKZ50N65ES5XKSA1, БТИЗ транзистор, 80 А, 1.35 В, 274 Вт The IKZ50N65ES5XKSA1 from Infineon is a TRENCHSTOP ™ 5S soft switching IGBT in 4 pin TO-247 package. TRENCHSTOP ™ 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode. The TRENCHSTOP™ 5S family is the new IGBT family addressing applications switching between 10KHz and 40KHz to deliver high efficiency, faster time to market cycles, circuit design complexity reduction. The TO-247 4 pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. The 4 pin TO-247 features over 20% total switching loses reduction compared to standard TO-247-3 and improves system efficiency or power density. It is typically used in industrial UPS, industrial SMPS, energy storage, charger and welding.

• High speed smooth switching device for hard and soft switching
• Plug and play replacement of previous generation IGBTs
• Low gate charge QG, very low control inductance loop
• 650V breakdown voltage, IC collector current 50A
• Very low VCEsat of 1.35V at Tvj = 25 C
• 4V gate-emitter threshold voltage at IC = 0.50mA, VCE = VGE
• Maximum junction temperature 175 C

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные