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BSZ0909NDXTMA1, Двойной МОП-транзистор, Двойной N Канал The BSZ0909NDXTMA1 from Infineon is a dual N-channel OptiMOS™ MOSFET in 8 pin WISON package. The OptiMOS™ technology combined with the PQFN 3×3 package offers an optimized solution for DC to DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Low switching losses
• High switching frequency operation
• Lowest parasitics
• Low gate drive losses
• Drain source voltage VDS is 30V, maximum RDS(on) is 18mohm, continuous drain current ID is 20A
• Operating temperature range from -55 C to 150 C
• Power dissipation is 17W at TC=25 C
Полупроводники — ДискретныеТранзисторыМОП-транзисторы
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